Process of removing polymers in semiconductor vias

ABSTRACT

A method for forming a contact via in an integrated circuit includes the formation of an aluminum conductive element on an integrated circuit device. A conformal insulating layer is then deposited over the device. Using a masking layer, an anisotropic etch is performed to open a via through the conformal insulating layer. During the anisotropic etch, polymers are created from the resist and etch chemistry and adhere to the sidewalls of the via. A resist developer containing tetramethylammonium hydroxide (TMAX) is used to remove the polymers from the via. A contact may now be formed by depositing conductive material into the via.

This is a continuation of application Ser. No. 07/786,039, filed Oct.31, 1991, now abandoned.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates generally to semiconductor integratedcircuits, and more specifically to the formation of contact vias in anintegrated circuit.

2. Description of the Prior Art

In semiconductor integrated circuits, formation of interconnect layersis important to the proper operation of these devices. Interconnectsignal lines make contact with lower conductive layers in the integratedcircuit through vias in an insulating layer. For best operation of thedevice, the lower conductive layers should not be damaged duringformation of the contact via.

Various interlevel insulating layers are deposited on the integratedcircuit during formation of the device. These layers separate theconductive layers from each other. One method to form contact viasthrough these insulating layers utilizes a resist layer to define thevia locations. An anisotropic etch is then performed to open the vias.During the anisotropic etch, however, polymers are created from theresist and the etch chemistry, and adhere to the sidewalls of the via.These polymers need to be removed so that proper contact is made in thevia between the conductive layers.

As known in the prior art, the polymers are removed or dissolved throughthe use of a solvent, acid or plasma etch. During this process, however,a substantial amount of the underlying aluminum conductive layer can beremoved. Additionally, the acid or plasma etch can remove some of theinsulating layer, which enlarges the size of the via.

Therefore, it would be desirable to provide a technique for formingcontact vias in integrated circuits without damaging the underlyingconductive layers or enlarging the size of the via.

SUMMARY OF THE INVENTION

It is therefore an object of the present invention to provide a methodfor forming contact vias in an integrated circuit without damagingunderlying conductive layers.

It is another object of the present invention to provide a method forforming contact vias wherein the shape and size of the vias are notaltered.

It is another object of the present invention to provide such a methodand structure which is compatible with standard process flows, and whichadd minimal additional complexity to the fabrication of a typicalintegrated circuit.

Therefore, according to the present invention a method for forming acontact via in an integrated circuit includes the formation of analuminum conductive element on an integrated circuit device. A conformalinsulating layer is then deposited over the device. Using a maskinglayer, an anisotropic etch is performed to open a via through theconformal insulating layer. During the anisotropic etch, polymers arecreated from the resist and etch chemistry and adhere to the sidewallsof the via. A resist developer containing tetramethylammonium hydroxide(TMAH) is used to remove the polymers from the via. A contact may now beformed by depositing conductive material into the via.

BRIEF DESCRIPTION OF THE DRAWINGS

The novel features believed characteristic of the invention are setforth in the appended claims. The invention itself however, as well as apreferred mode of use, and further objects and advantages thereof, willbest be understood by reference to the following detailed description ofan illustrative embodiment when read in conjunction with theaccompanying drawings, wherein:

FIGS. 1 and 2 are sectional views illustrating a prior art method forforming a via in an integrated circuit; and

FIGS. 3-5 are sectional views illustrating the preferred method forforming a via in an integrated circuit according to the presentinvention.

DESCRIPTION OF THE PREFERRED EMBODIMENT

The process steps and structures described below do not form a completeprocess flow for manufacturing integrated circuits. The presentinvention can be practiced in conjunction with integrated circuitfabrication techniques currently used in the art, and only so much ofthe commonly practiced process steps are included as are necessary foran understanding of the present invention. The figures representingcross-sections of portions of an integrated circuit during fabricationare not drawn to scale, but instead are drawn so as to illustrate theimportant features of the invention.

FIGS. 1 and 2 depict formation of an interlevel contact via as known inthe prior art. Referring to FIG. 1, a conductive element 10 is formed onan interlevel insulating layer 12. The conductive element 10 is madefrom aluminum, and the insulating layer 12 may be made from oxide. Aconformal insulating layer 14 of oxide is then deposited over thedevice. Using a masking layer (not shown), an anisotropic etch isperformed to open a via 16 through the conformal insulating layer 14.During the anisotropic etch, polymers 18 are formed from the resist andetch chemistry. These polymers 18 adhere to the sidewalls of the via 16.

FIG. 2 illustrates the via after the polymers 18 have been removed.Typically, a plasma etch or a solvent known in the art as piranha, whichcontains a mixture of hydrogen peroxide and sulfuric acid, is used toremove the polymers 18. One skilled in the art will recognize thatpiranha will not damage an underlying conductive layer made frompolycrystalline silicon. If, however, the underlying conductive layer ismade from aluminum, a refractory metal, or a silicided poly, piranhawill etch into the material, and can remove a substantial amount of thelayer. Thus, the acid used to remove the polymers be creates undesirableholes in the aluminum.

If a plasma etch is used to remove the polymers 18, undesirable holescan also be formed in the aluminum due to the overetching required toensure complete removal of the polymers 18. If the etch is not performedlong enough, some of the polymers 18 will not be removed. Thus, a plasmaetch presents a trade off. Either holes are formed in the aluminum ornot all of the polymers 18 are removed.

Another problem encountered with this method is the plasma etch or acidalso removes some of the conformal insulating layer 14. This increasesthe size of the via 16, and smooths out the sidewalls of the via 16.Increasing the size of the via 16 can ultimately result in decreasingthe total number of components that can be built on the integratedcircuit.

FIGS. 3-5 illustrate the formation of vias according to the presentinvention. Referring to FIG. 3, a conductive element 20 is formed on aninterlevel insulating layer 22. A conformal insulating layer 24 isdeposited over the device. The conductive element 20 is made fromaluminum, and the insulating layers may be made from oxide. Using amasking layer (not shown), an anisotropic etch is performed to open avia 26 in the conformal insulating layer 24. During the anisotropicetch, polymers 28 are formed from the resist and etch chemistry. Thesepolymers 28 adhere to the sidewalls of the via 26.

FIG. 4 illustrates a device after the polymers 28 have been removed. Aresist developer containing tetramethylamonium hydroxide (TMAH) is usedto remove the polymers 28 in the via 26. One resist developer which canbe used, for example, is sold under the brand name of MicropositDeveloper S-319, and is manufactured by Shipley Co., Inc. By using aresist developer containing TMAH, the size and sidewalls of the via arenot affected. Thus, via 26 is not enlarged, and the sidewalls are leftrough. Additionally, a relatively small portion of the aluminum isremoved.

Referring to FIG. 5, a conductive layer 30 is deposited over the deviceand extends into the via 26, forming a conductive contact between thealuminum and the conductive layer 30. The integrated circuit is nowready for further processing using techniques which are known in theart.

It will be appreciated by those skilled in the art, the techniquesdescribed above create vias without removing a substantial amount ofaluminum. Additionally, the resist developer used to remove the polymersdoes not etch oxide, thereby maintaining the desired size of the via.

While the invention has been particularly shown and described withreference to a preferred embodiment, it will be understood by thoseskilled in the art that various changes in form and detail may be madetherein without departing from the spirit and scope of the invention.

What is claimed is:
 1. A method for forming a via, comprising the stepsof:forming an oxide layer over a conductive element; forming andpatterning a resist layer over the oxide layer to define via locations;anisotropically etching the oxide layer to open vias in the vialocations, wherein contaminate particles containing a polymer, createdfrom the resist and etch chemistry, are formed on the sidewalls of thevia; and removing the contaminate particles with a chemical which actsas a developer for the resist.
 2. The method of claim 1, wherein saidconductive element comprises aluminum.
 3. The method of claim 2, whereinsaid conductive element comprises a refractory metal.
 4. The method ofclaim 1, wherein said resist layer comprises a positive resist.
 5. Themethod of claim 1, wherein said chemical that acts as a solvent containstetramethylammonium hydroxide.
 6. The method of claim 1, wherein aconductive layer is deposited over the insulating layer after thecontaminate particles are removed, wherein a conductive contact is madebetween the conductive element and the conductive layer.
 7. The methodof claim 6, wherein said conductive layer comprises aluminum.
 8. Amethod of claim 7, wherein said conductive layer comprises a refractorymetal.